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| PROCESS Small Signal Transistor NPN - High Current Transistor Chip CP314 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 7,070 PRINCIPAL DEVICE TYPES CBCP68 CBCX68 CZT651 MPS650 MPS651 EPITAXIAL PLANAR 40 x 40 MILS 9.0 MILS 7.9 x 8.7 MILS 9.0 x 14 MILS Al - 30,000A Au - 18,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP314 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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